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insulated gate bipolar transistor IRG7SC12FPBF 1 www.irf.com 03/25/11 v ces = 600v i c = 8a, t c = 100c t sc 3 s, t j(max) = 150c v ce(on) typ. = 1.60v features ? low v ce (on) trench igbt technology ? maximum junction temperature 150 c ?3 s short circuit soa ? square rbsoa ? positive v ce (on) temperature co-efficient ? tight parameter distribution ? lead free package benefits ? high efficiency in a hvac, refrigerator applications ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi g c e gate collector emitter d 2 pak IRG7SC12FPBF c e g e c g n-channel absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 24 i c @ t c = 100c continuous collector current 13 i nominal nominal current 8 i cm pulse collector current 24 i lm clamped inductive load current 32 v ge gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 69 p d @ t c = 100c maximum power dissipation 28 t j operating junction and -55 to +150 t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) thermal resistance parameter min. typ. max. units r jc thermal resistance junction-to-case ??? ??? 1.8 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.50 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ??? c/w a v w c www.datasheet.net/ datasheet pdf - http://www..co.kr/
IRG7SC12FPBF 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, l = 1.0mh, r g = 47 . pulse width limited by max. junction temperature. r is measured at t j of approximately 90c. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 250 a v (br)ces / t j temperature coeff. of breakdown voltage ?0.58?v/c v ge = 0v, i c = 1ma (25c-150c) ? 1.60 1.85 i c = 8a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 1.60 ? v i c = 8a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 4.5 ? 7.0 v v ce = v ge , i c = 350 a v ge(th) / tj threshold voltage temp. coefficient ? -12 ? mv/c v ce = v ge , i c = 1.0ma (25c - 150c) gfe forward transconductance ? 6.2 ? s v ce = 50v, i c = 8a, pw = 60 s i ces collector-to-emitter leakage current ? 1.0 20 a v ge = 0v, v ce = 600v ?80? v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 34 51 i c = 8a q ge gate-to-emitter charge (turn-on) ? 6.2 9.3 nc v ge = 15v q gc gate-to-collector charge (turn-on) ? 16 24 v cc = 400v e on turn-on switching loss ? 390 610 i c = 8a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 280 440 j r g = 47 , l = 1.0mh, l s = 150nh e total total switching loss ? 670 1050 tj = 25c t d(on) turn-on delay time ? 40 60 i c = 8a, v cc = 400v, v ge = 15v t r rise time ? 20 40 ns r g = 47 , l = 1.0mh, l s = 150nh t d(off) turn-off delay time ? 210 270 tj = 25c t f fall time ? 120 180 e on turn-on switching loss ? 515 ? i c = 8a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 570 ? j r g = 47 , l=1.0mh, l s = 150nh e total total switching loss ? 1085 ? tj = 150c t d(on) turn-on delay time ? 30 ? i c = 8a, v cc = 400v, v ge = 15v t r rise time ? 20 ? ns r g = 47 , l = 1.0mh, l s = 150nh t d(off) turn-off delay time ? 250 ? tj = 150c t f fall time ? 285 ? c ies input capacitance ? 880 ? pf v ge = 0v c oes output capacitance ? 30 ? v cc = 30v c res reverse transfer capacitance ? 20 ? f = 1.0mhz t j = 150c, i c = 32a rbsoa reverse bias safe operating area full square v cc = 480v, vp 600v rg = 47 600v rg = 47 conditions 3?? s www.datasheet.net/ datasheet pdf - http://www..co.kr/
IRG7SC12FPBF www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j 150c; v ge =15v fig. 4 - reverse bias soa t j = 150c; v ge =15v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 60 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 60 s 0 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 30 i c ( a ) 0 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 i c ( a ) 1 10 100 1000 v ce (v) 0.01 0.1 1 10 100 i c ( a ) 10 sec 100 sec tc = 25c tj = 150c single pulse dc 1msec 0 2 4 6 8 10 v ce (v) 0 4 8 12 16 20 24 28 32 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 4 8 12 16 20 24 28 32 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v www.datasheet.net/ datasheet pdf - http://www..co.kr/
IRG7SC12FPBF 4 www.irf.com fig. 12 - typ. energy loss vs. i c t j = 150c; l = 1.0mh; v ce = 400v, r g = 47 ; v ge = 15v fig. 7 - typ. igbt output characteristics t j = 150c; tp = 60 s fig. 9 - typical v ce vs. v ge t j = 25c fig. 10 - typical v ce vs. v ge t j = 150c fig. 11 - typ. transfer characteristics v ce = 50v; tp = 60 s fig. 8 - typical v ce vs. v ge t j = -40c 4 6 8 10 12 v ge, gate-to-emitter voltage (v) 0 5 10 15 20 25 30 35 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 150c t j = 25c 0 4 8 12 16 20 i c (a) 100 300 500 700 900 1100 e n e r g y ( j ) e off e on 0 2 4 6 8 10 v ce (v) 0 4 8 12 16 20 24 28 32 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 6 8 10 12 14 16 18 20 v ge (v) 0.5 1.5 2.5 3.5 4.5 5.5 v c e ( v ) i ce = 4a i ce = 8a i ce = 16a 6 8 10 12 14 16 18 20 v ge (v) 0.5 1.5 2.5 3.5 4.5 5.5 v c e ( v ) i ce = 4a i ce = 8a i ce = 16a 6 8 10 12 14 16 18 20 v ge (v) 0.5 1.5 2.5 3.5 4.5 5.5 v c e ( v ) i ce = 4a i ce = 8a i ce = 16a www.datasheet.net/ datasheet pdf - http://www..co.kr/
IRG7SC12FPBF www.irf.com 5 fig. 13 - typ. switching time vs. i c t j = 150c; l = 1.0mh; v ce = 400v, r g = 47 ; v ge = 15v fig. 14 - typ. energy loss vs. r g t j = 150c; l = 1.0mh; v ce = 400v, i ce = 8a; v ge = 15v fig. 15 - typ. switching time vs. r g t j = 150c; l = 1mh; v ce = 400v, i ce = 8a; v ge = 15v fig. 16 - v ge vs. short circuit time v cc = 400v; t c = 25c fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 18 - typical gate charge vs. v ge i ce = 8a; l = 2.4mh 0 50 100 150 200 250 rg ( ) 300 400 500 600 700 800 900 1000 e n e r g y ( j ) e off e on 0 50 100 150 200 250 r g ( ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 8 1012141618 v ge (v) 3 5 7 9 11 13 t i m e ( s ) 10 30 50 70 90 110 c u r r e n t ( a ) t sc i sc 0 100 200 300 400 500 v ce (v) 1 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 5 10 15 20 25 30 35 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 18 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v 0 4 8 12 16 20 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on www.datasheet.net/ datasheet pdf - http://www..co.kr/
IRG7SC12FPBF 6 www.irf.com fig 19. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.7348 0.000176 0.7213 0.001639 0.3554 0.013407 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri www.datasheet.net/ datasheet pdf - http://www..co.kr/
IRG7SC12FPBF www.irf.com 7 1k vc c dut 0 l l rg 80 v dut 480v l rg vcc diode clamp / du t du t / driver - 5v rg vcc dut r = v cc i cm fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit dc 4x dut vcc scsoa r sh www.datasheet.net/ datasheet pdf - http://www..co.kr/
IRG7SC12FPBF 8 www.irf.com fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 150c using fig. ct.4 fig. wf3 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -100 0 100 200 300 400 500 600 -0.5 -0.2 0.1 0.4 0.7 1.0 1.3 time( s) v ce (v) -2 0 2 4 6 8 10 12 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 600 -0.2 -0.1 0.0 0.1 0.2 0.3 time ( s) v ce (v) -5 0 5 10 15 20 25 30 i ce (a) i ce 90% i ce 5% v ce 10% i ce tr eon loss -100 0 100 200 300 400 500 -3.0 0.0 3.0 6.0 time (us) vce (v) -50 0 50 100 150 200 250 vce ic www.datasheet.net/ datasheet pdf - http://www..co.kr/
IRG7SC12FPBF www.irf.com 9

dat e code year 0 = 2000 we e k 02 a = as s e mb l y s i t e cod e rectifier international part number p = des ignat es lead - f ree product (opt ional) f530s in the assembly line "l" as s embled on ww 02, 2000 t his is an irf530s wit h lot code 8024 int ernational logo rectifier lot code assembly ye ar 0 = 2000 part number dat e code line l we e k 02 or f 530s logo as s e mb l y lot code

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IRG7SC12FPBF 10 www.irf.com ir world headquarters: 101n. sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/2011 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site.
! dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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